Electrical Characterization of Au/Fluorene-Carbazole (FC)/p-Si Schottky Barrier Diodes

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dc.contributor.authorYildirim, M.
dc.contributor.authorTugluoglu, N.
dc.contributor.authorYuksel, O. F.
dc.contributor.authorErdoğan, Abdullah
dc.contributor.authorKus, M.
dc.date.accessioned2021-03-20T20:14:52Z
dc.date.available2021-03-20T20:14:52Z
dc.date.issued2016
dc.departmentBTÜ, Mühendislik ve Doğa Bilimleri Fakültesi, Kimya Mühendisliği Bölümüen_US
dc.descriptionInternational Semiconductor Science and Technology Conference (ISSTC) -- MAY 11-13, 2015 -- Kusadasi, TURKEYen_US
dc.description.abstractThe Fluorene-Carbazole (FC) was synthesized by Suziki method in this study. The organic semiconductor is prepared on p-type Si substrate by spin coating method. We have produced Au/FC/p-Si Schottky diodes. We have investigated the current-voltage characteristics over temperature range between 200 and 350 K. The measured current-voltage (I-V) characteristics of device have demonstrated a good rectification behaviour at all temperatures. The parameters such as the ideality factor (n), barrier height (Phi(B)) and series resistance (R-S) were determined from the experimental data using standard current-voltage analysis method. At T=200 K, we have found the values of the n and Phi(B) as 2.78 and 0.491 eV respectively. On the other hand, their values were found as n=1.86 and Phi(B)=0.779 eV at T=350 K. The values of R-S are calculated using Cheung and Cheung functions between 200 K and 350 K. The H(I)-I plot of Cheung and Cheung method shows RS of 1823.23 Omega for 200 K and value of 952.6 Omega for 350 K. (C) 2015 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of Conference Committee Members of International Semiconductor Science and Technology Conference 2015 (ISSTC 2015).en_US
dc.description.sponsorshipKavasoglu Pazarlama Ticaret Ltd Sti, Kontek Muhendislik Otomasyon Danismanlik San Tic Ltd Sti, Tekno Tip Analitik Sistemler Ltd Sti, Yildirim Elektronik, Gediz Univ Teknoloji Transfer Ofisi, Hamleen_US
dc.identifier.doi10.1016/j.matpr.2016.03.068en_US
dc.identifier.endpage1261en_US
dc.identifier.issn2214-7853
dc.identifier.issue5en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1255en_US
dc.identifier.urihttp://doi.org/10.1016/j.matpr.2016.03.068
dc.identifier.urihttps://hdl.handle.net/20.500.12885/1119
dc.identifier.volume3en_US
dc.identifier.wosWOS:000373069200005en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorErdoğan, Abdullah
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofMaterials Today-Proceedingsen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky diodeen_US
dc.subjectfluorene-carbazoleen_US
dc.subjectseries resistanceen_US
dc.titleElectrical Characterization of Au/Fluorene-Carbazole (FC)/p-Si Schottky Barrier Diodesen_US
dc.typeConference Objecten_US

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