Electrical Characterization of Au/Fluorene-Carbazole (FC)/p-Si Schottky Barrier Diodes

Küçük Resim Yok

Tarih

2016

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Elsevier Science Bv

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

The Fluorene-Carbazole (FC) was synthesized by Suziki method in this study. The organic semiconductor is prepared on p-type Si substrate by spin coating method. We have produced Au/FC/p-Si Schottky diodes. We have investigated the current-voltage characteristics over temperature range between 200 and 350 K. The measured current-voltage (I-V) characteristics of device have demonstrated a good rectification behaviour at all temperatures. The parameters such as the ideality factor (n), barrier height (Phi(B)) and series resistance (R-S) were determined from the experimental data using standard current-voltage analysis method. At T=200 K, we have found the values of the n and Phi(B) as 2.78 and 0.491 eV respectively. On the other hand, their values were found as n=1.86 and Phi(B)=0.779 eV at T=350 K. The values of R-S are calculated using Cheung and Cheung functions between 200 K and 350 K. The H(I)-I plot of Cheung and Cheung method shows RS of 1823.23 Omega for 200 K and value of 952.6 Omega for 350 K. (C) 2015 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of Conference Committee Members of International Semiconductor Science and Technology Conference 2015 (ISSTC 2015).

Açıklama

International Semiconductor Science and Technology Conference (ISSTC) -- MAY 11-13, 2015 -- Kusadasi, TURKEY

Anahtar Kelimeler

Schottky diode, fluorene-carbazole, series resistance

Kaynak

Materials Today-Proceedings

WoS Q Değeri

N/A

Scopus Q Değeri

Q2

Cilt

3

Sayı

5

Künye