Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

Yükleniyor...
Küçük Resim

Tarih

2019

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Academic Press Ltd- Elsevier Science Ltd

Erişim Hakkı

info:eu-repo/semantics/openAccess

Özet

This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Omega have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.

Açıklama

Anahtar Kelimeler

Light emitting diodes, Luminescence, LED performance, Current distribution

Kaynak

Superlattices And Microstructures

WoS Q Değeri

Q3

Scopus Q Değeri

Q2

Cilt

128

Sayı

Künye