Post-deposition annealing effect on the structural and electrical properties of Ytterbium oxide as an alternative gate dielectric

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dc.authorid0000-0002-9573-5805
dc.authorid0000-0002-6652-4662
dc.contributor.authorMorkoc, Berk
dc.contributor.authorKahraman, Aysegul
dc.contributor.authorYilmaz, Ercan
dc.date.accessioned2026-02-12T21:05:05Z
dc.date.available2026-02-12T21:05:05Z
dc.date.issued2022
dc.departmentBursa Teknik Üniversitesi
dc.description.abstractThe possibility of ytterbium(III) oxide, one of the rare earth oxides, to replace silicon dioxide used as the gate dielectric is discussed in this article. For such a replacement, it is primarily necessary to understand the physical and chemical characteristics of ytterbium(II) oxide as a candidate, such as bond structure, electronic structure, band offsets with Si, dielectric constant, interfacial states and defect behavior. The effects of structural and electrical features of ytterbium(III) oxide-based MOS capacitors on device performance are investigated. The electron beam physical vapor deposition (EBPVD) technique was used for the deposition of ytterbium(III) oxide thin films. The 122 nm thick Yb2O3 thin film was annealed at four different temperatures (200 degrees C, 400 degrees C, 600 degrees C, and 800 degrees C) in nitrogen environment. The crystallite size determined from the as-deposited sample as 15 nm is the lowest. As expected, crystallite sizes increased as a result of increasing annealing temperature. The presence of Yb2+ oxidation states increased in the region close to the interface or at the interface. The binding energies of the Yb 4d and O 1s spectra increased with increasing depth into the films. In the O 1s spectra, the organic bonds on the surface first decreased and then increased with increasing annealing temperature. Silicate formation at the interface was determined for the annealed samples. This affected the electrical performance of the capacitors. The calculated dielectric values range from 12.1 to 15.8. Interface level densities were found in the order of 10(12) cm(-2) and it did not exhibit frequency-dependent behavior. The calculated values for the effective charge densities varied between -24.19x10(11) - 7.03x10(11) cm(-2). It has been determined that mostly negative charges are trapped more for different capacitors. Finally, Fermi energy level, dopant concentration, diffusion potential and barrier heights were calculated.
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [117R054]; Presidency of Strategy and Budget of the Presidency of Republic of Turkey [2016K122834]
dc.description.sponsorshipThis work is supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under ARDEB1001-Scientific and Technological Research Projects Support Program (Contract Number: 117R054) and the Presidency of Strategy and Budget of the Presidency of Republic of Turkey (Contract Number: 2016K122834).
dc.identifier.doi10.1016/j.matchemphys.2022.126875
dc.identifier.issn0254-0584
dc.identifier.issn1879-3312
dc.identifier.scopus2-s2.0-85139595595
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.matchemphys.2022.126875
dc.identifier.urihttps://hdl.handle.net/20.500.12885/6774
dc.identifier.volume292
dc.identifier.wosWOS:000873971000005
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofMaterials Chemistry and Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260212
dc.subjectRare-earth oxides
dc.subjectHigh-k dielectrics
dc.subjectEBPVD
dc.subjectThin films
dc.subjectMOS Capacitor
dc.titlePost-deposition annealing effect on the structural and electrical properties of Ytterbium oxide as an alternative gate dielectric
dc.typeArticle

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