Characterization of CdS films and CdS/Si heterojunctions prepared by ultrasonic spray pyrolysis and their response to light

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dc.authorid0000-0002-9339-5114en_US
dc.contributor.authorBilgin, Vildan
dc.contributor.authorSarıca, Emrah
dc.contributor.authorDemirselcuk, Barbaros
dc.contributor.authorErturk, Kadir
dc.date.accessioned2021-03-20T20:09:14Z
dc.date.available2021-03-20T20:09:14Z
dc.date.issued2020
dc.departmentBTÜ, Mühendislik ve Doğa Bilimleri Fakültesi, Fizik Bölümüen_US
dc.description.abstractIn this work CdS thin films were deposited onto glass and p-Si substrates by ultrasonically spraying of precursor solutions prepared in molarity ranging from 0.025 M, to 0.1 M. Structural investigations revealed that all films have hexagonal structure and mean crystallite size was found to be in the range of 18 nm-21 nm. On the other hand, CdS films exhibited 65-70% optical transmittance and band gap energy for all films was found to be about 2.42 eV. Electrical measurements of CdS/Si heterojunctions were carried out under both dark and illumination conditions. Calculated ideality factor and zero-bias barrier height ranged from 3.02 to 2.66 and 0.74 eV-0.78 eV according to TE theory whereas they ranged from 6.91 to 4.73 and 0.71 eV-0.74 eV according to Cheungs' method. Increase in reverse saturation current when heterojunctions were illuminated indicated that they have good sensitivity to solar light.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUB.ITAK)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [111T057]en_US
dc.description.sponsorshipThis work was supported by The Scientific and Technological Research Council of Turkey (TUB.ITAK) under the project number 111T057.en_US
dc.identifier.doi10.1016/j.physb.2020.412499en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttp://doi.org/10.1016/j.physb.2020.412499
dc.identifier.urihttps://hdl.handle.net/20.500.12885/318
dc.identifier.volume599en_US
dc.identifier.wosWOS:000583242600005en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorSarıca, Emrah
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCdS filmsen_US
dc.subjectUltrasonic spray pyrolysisen_US
dc.subjectCdS/Si heterojunctionsen_US
dc.subjectStructural propertiesen_US
dc.subjectOptical propertiesen_US
dc.subjectCurrent-voltage characteristicsen_US
dc.titleCharacterization of CdS films and CdS/Si heterojunctions prepared by ultrasonic spray pyrolysis and their response to lighten_US
dc.typeArticleen_US

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