Photodiode and photodetector characteristics of Ag/MnPc/Si/Ag and Ag/MnPc/SiO2/Ag heterojunctions
Küçük Resim Yok
Tarih
2025
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Manganese (III) phthalocyanine (4) (modified MnPc) was synthesized by tetramerization of the relevant phthalonitrile under appropriate conditions and thermally coated on Si and SiO2 coated surfaces for the preparation of Ag/MnPc/Si/Ag and Ag/MnPc/SiO2/Ag heterojunctions. Series of investigation methods were applied to assess structural, optical and optoelectronic properties. For the assessment of surface morphology and structure, scanning electron microscopy (SEM) and X-ray diffractometry (XRD) techniques were applied, respectively. Optical properties were evaluated using UV-vis spectrophotometry where energy band gap of the MnPc, Si and SiO2 thin films were derived as 2.46 eV, 2.79 eV and 2.6 eV, respectively. I-V investigation was employed in dark and under various illumination intensities in 20 mW.cm-2, 40 mW.cm-2, 60 mW.cm-2, 80 mW.cm-2 and 100 mW.cm-2. Using I-V data different device parameters like ideality factor, serries resistance and barrier height values were derived. Besides various photodetector and photosensitivity parameters were calculated. It was seen that Ag/MnPc/Si/Ag and Ag/MnPc/SiO2/Ag heterojunctions are sensitive to light but no direct correlation between light intensity and diode parameters were seen.
Açıklama
Anahtar Kelimeler
Electrical-Properties, Thin-Films, Phthalocyanine, Performance
Kaynak
Journal of Materials Science-Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
36
Sayı
23
