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    Electrical Characterization of Au/Fluorene-Carbazole (FC)/p-Si Schottky Barrier Diodes
    (Elsevier Science Bv, 2016) Yildirim, M.; Tugluoglu, N.; Yuksel, O. F.; Erdoğan, Abdullah; Kus, M.
    The Fluorene-Carbazole (FC) was synthesized by Suziki method in this study. The organic semiconductor is prepared on p-type Si substrate by spin coating method. We have produced Au/FC/p-Si Schottky diodes. We have investigated the current-voltage characteristics over temperature range between 200 and 350 K. The measured current-voltage (I-V) characteristics of device have demonstrated a good rectification behaviour at all temperatures. The parameters such as the ideality factor (n), barrier height (Phi(B)) and series resistance (R-S) were determined from the experimental data using standard current-voltage analysis method. At T=200 K, we have found the values of the n and Phi(B) as 2.78 and 0.491 eV respectively. On the other hand, their values were found as n=1.86 and Phi(B)=0.779 eV at T=350 K. The values of R-S are calculated using Cheung and Cheung functions between 200 K and 350 K. The H(I)-I plot of Cheung and Cheung method shows RS of 1823.23 Omega for 200 K and value of 952.6 Omega for 350 K. (C) 2015 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of Conference Committee Members of International Semiconductor Science and Technology Conference 2015 (ISSTC 2015).
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    The synthesis of 4,4-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
    (Springer, 2019) Yildirim, M.; Erdoğan, Abdullah; Yuksel, O. F.; Kus, M.; Can, M.; Akin, U.
    In the present study, firstly, a 4,4-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) (FC) organic compound was synthesized and its structural and optical characterization were carried. Then, the effect on the device of the FC thin film prepared between n-type silicon substrate and gold metal by the spin coating technique was reported. The ideality factor (n), barrier height (phi B) and series resistance (Rs) values of the prepared structure from the I-V data have been found at 1.08, 0.78eV and 240 at room temperature (300K), respectively. According to the Gaussian distribution of the barrier height obtained from the various temperature ranges (220-380K), the phi b0 and A* values from the ordinate intercept and the slope of the modified Richardson curve of ln versus 1/T plot which has been found to be 0.97eV and 114 A/cm(2)K(2), respectively. Results indicate that the high barrier height is achieved for the Au/FC/n-Si metal-organic layer-semiconductor diode as compared to the Au/n-Si metal-semiconductor (MS) diode.