The synthesis of 4,4-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode

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Tarih

2019

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Springer

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

In the present study, firstly, a 4,4-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) (FC) organic compound was synthesized and its structural and optical characterization were carried. Then, the effect on the device of the FC thin film prepared between n-type silicon substrate and gold metal by the spin coating technique was reported. The ideality factor (n), barrier height (phi B) and series resistance (Rs) values of the prepared structure from the I-V data have been found at 1.08, 0.78eV and 240 at room temperature (300K), respectively. According to the Gaussian distribution of the barrier height obtained from the various temperature ranges (220-380K), the phi b0 and A* values from the ordinate intercept and the slope of the modified Richardson curve of ln versus 1/T plot which has been found to be 0.97eV and 114 A/cm(2)K(2), respectively. Results indicate that the high barrier height is achieved for the Au/FC/n-Si metal-organic layer-semiconductor diode as compared to the Au/n-Si metal-semiconductor (MS) diode.

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Kaynak

Journal Of Materials Science-Materials In Electronics

WoS Q Değeri

Q2

Scopus Q Değeri

Q2

Cilt

30

Sayı

11

Künye