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    Photodetector performance analysis of a hybrid MnPc/DLC device with high photoresponsivity, sensitivity, and On/Off ratio
    (Elsevier, 2024) Unal, Fatih; Aktas, Sitki; Kurt, Mustafa Sukru; Koc, Mumin Mehmet; Coskun, Burhan; Aslan, Naim; Gur, Mahmut
    The fabrication and characterization of high-performance devices for optoelectronic applications, particularly their response to incident light, are crucial. In this study, a MnPc/DLC device was fabricated using thermal evaporation and magnetron sputtering techniques, and its fundamental optoelectronic properties were characterised. Key diode parameters including barrier height, ideality factor, reverse saturation current, series resistance, and shunt resistance were determined using several methods, such as TE, Ohm's Law, the modified Norde method, and the Mikhelashvili method. The results from these methods were found to be consistent with varying light intensities. Additionally, photodetector parameters of the MnPc/DLC device were measured at +/- 1 V under light intensities of 20, 40, 60, 80, and 100 mW/cm(2), and the findings were compared with the literature. The maximum values for photocurrent, photoresponsivity, photosensitivity, specific detectivity, and on/off ratio were 6.41 x 10(-2) A, 2.49 A/W, 2.02 x 10(5), 5.8 x 10(9) Jones and 2.06 x 10(3), respectively. Notably, the photocurrent, photoresponsivity, photosensitivity, and on/off ratio values were found to be significantly higher and more promising compared to those reported in the literature.
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    Photodiode and photodetector characteristics of Ag/MnPc/Si/Ag and Ag/MnPc/SiO2/Ag heterojunctions
    (Springer, 2025) Unal, Fatih; Koc, Mumin Mehmet; Aktas, Sitki; Coskun, Burhan; Kurt, Mustafa Sukru; Gur, Mahmut; Arslan, Tayfun
    Manganese (III) phthalocyanine (4) (modified MnPc) was synthesized by tetramerization of the relevant phthalonitrile under appropriate conditions and thermally coated on Si and SiO2 coated surfaces for the preparation of Ag/MnPc/Si/Ag and Ag/MnPc/SiO2/Ag heterojunctions. Series of investigation methods were applied to assess structural, optical and optoelectronic properties. For the assessment of surface morphology and structure, scanning electron microscopy (SEM) and X-ray diffractometry (XRD) techniques were applied, respectively. Optical properties were evaluated using UV-vis spectrophotometry where energy band gap of the MnPc, Si and SiO2 thin films were derived as 2.46 eV, 2.79 eV and 2.6 eV, respectively. I-V investigation was employed in dark and under various illumination intensities in 20 mW.cm-2, 40 mW.cm-2, 60 mW.cm-2, 80 mW.cm-2 and 100 mW.cm-2. Using I-V data different device parameters like ideality factor, serries resistance and barrier height values were derived. Besides various photodetector and photosensitivity parameters were calculated. It was seen that Ag/MnPc/Si/Ag and Ag/MnPc/SiO2/Ag heterojunctions are sensitive to light but no direct correlation between light intensity and diode parameters were seen.