Yildirim, M.Tugluoglu, N.Yuksel, O. F.Erdoğan, AbdullahKus, M.2021-03-202021-03-2020162214-7853http://doi.org/10.1016/j.matpr.2016.03.068https://hdl.handle.net/20.500.12885/1119International Semiconductor Science and Technology Conference (ISSTC) -- MAY 11-13, 2015 -- Kusadasi, TURKEYThe Fluorene-Carbazole (FC) was synthesized by Suziki method in this study. The organic semiconductor is prepared on p-type Si substrate by spin coating method. We have produced Au/FC/p-Si Schottky diodes. We have investigated the current-voltage characteristics over temperature range between 200 and 350 K. The measured current-voltage (I-V) characteristics of device have demonstrated a good rectification behaviour at all temperatures. The parameters such as the ideality factor (n), barrier height (Phi(B)) and series resistance (R-S) were determined from the experimental data using standard current-voltage analysis method. At T=200 K, we have found the values of the n and Phi(B) as 2.78 and 0.491 eV respectively. On the other hand, their values were found as n=1.86 and Phi(B)=0.779 eV at T=350 K. The values of R-S are calculated using Cheung and Cheung functions between 200 K and 350 K. The H(I)-I plot of Cheung and Cheung method shows RS of 1823.23 Omega for 200 K and value of 952.6 Omega for 350 K. (C) 2015 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of Conference Committee Members of International Semiconductor Science and Technology Conference 2015 (ISSTC 2015).eninfo:eu-repo/semantics/closedAccessSchottky diodefluorene-carbazoleseries resistanceConference Object10.1016/j.matpr.2016.03.0683512551261WOS:000373069200005N/AQ2