Ispir, MuratTanbay, Tayfun2026-02-082026-02-0820251996-1073https://doi.org/10.3390/en18195267https://hdl.handle.net/20.500.12885/6049Accurate prediction of photovoltaic performance hinges on resolving the electron density in the P-region and the hole density in the N-region. Motivated by this need, we present a comprehensive assessment of a meshless global radial basis function (RBF) collocation strategy for the steady current continuity equation, covering a one-dimensional two-region P-N junction and a two-dimensional single-region problem. The study employs Gaussian (GA) and generalized multiquadric (GMQ) bases, systematically varying shape parameter and node density, and presents a detailed performance analysis of the meshless method. Results map the accuracy-stability-computation-time landscape: GA achieves faster convergence but over a narrower stability window, whereas GMQ exhibits greater robustness to shape-parameter variation. We identify stability plateaus that preserve accuracy without severe ill-conditioning and quantify the runtime growth inherent to dense global collocation. A utopia-point multi-objective optimization balances error and computation time to yield practical node-count guidance; for the two-dimensional case with equal weighting, an optimum of 19 intervals per side emerges, largely insensitive to the RBF choice. Collectively, the results establish global RBF collocation as a meshless, accurate, and systematically optimizable alternative to conventional mesh-based solvers for high-fidelity carrier-density prediction in P-N junctions, thereby enabling more reliable performance analysis and design of photovoltaic devices.eninfo:eu-repo/semantics/openAccessphotovoltaic cellcarrier continuity equationmeshless methodRBF collocationArticle10.3390/en181952671819WOS:0015935805000012-s2.0-105019180417Q3Q1